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IXTA3N120HV AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXTA3N120HV product

IXTA3N120HV

MOSFETs - Single

MOSFET1200VHigh Voltage

The IXTA3N120HV is a high-voltage N-Channel Power MOSFET rated for 1200V and 3A, designed for demanding industrial applications.

Best for

  • High voltage power conversion
  • Capacitor discharge

Avoid if

  • Low voltage applications where lower RDS(on) parts are more efficient

Check before use

  • Thermal design for 200W dissipation

Key specifications

VDSS
1200 V
ID25
3 A
RDS(on)
4.5 Ω

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial

Datasheet

89768f452042f93fc885ff86dd65cb6c_littelfuse_discrete_mosfets_n-channel_standard_ixta3n120hv_datasheet.pdf.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXTA3N120HV: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage, avalanche-rated N-Channel enhancement mode MOSFET featuring a fast intrinsic diode.