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IXTH1N200P3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXTH1N200P3 product

IXTH1N200P3

MOSFETs - Single

High VoltageMOSFETN-Channel

The IXTH1N200P3 is a high-voltage N-Channel MOSFET rated for 2000V and 1A, optimized for demanding power applications.

Best for

  • High voltage power supplies
  • Capacitor discharge circuits
  • Pulse generation

Avoid if

  • Low voltage applications where lower Rds(on) devices are more efficient

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

Vdss
2000 V
Id
1.0 A
Rds(on)
40 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

PowerIndustrial

Datasheet

163247.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXTH1N200P3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET from IXYS (Littelfuse) designed for high-voltage switching applications up to 2000V.