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IXTP3N120 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXTP3N120 product

IXTP3N120

MOSFETs - Single

MOSFET1200VPowerN-Channel

The IXTP3N120 is a 1200V, 3A N-Channel power MOSFET in a TO-220AB package, designed for high-voltage applications.

Best for

  • High-voltage power conversion
  • Pulse circuits

Avoid if

  • Low-voltage, high-speed switching applications where lower RDS(on) is required

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage

Key specifications

Vdss
1200 V
Id
3 A
RDS(on)
4.5 Ω

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

PowerIndustrial

Datasheet

163436.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXTP3N120: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET rated for 1200V and 3A, featuring an avalanche-rated design and a fast intrinsic diode.