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IXTP60N20T AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXTP60N20T product

IXTP60N20T

MOSFETs - Single

MOSFETN-Channel200V60ATrench

The IXTP60N20T is a robust 200V, 60A N-Channel Trench MOSFET optimized for high-power density and high-temperature operation up to 175°C.

Best for

  • DC-DC Converters
  • Motor Drives
  • Switch-Mode Power Supplies

Avoid if

  • Applications requiring extremely low gate drive voltages below 3V.

Check before use

  • Thermal dissipation requirements and gate drive current capabilities.

Key specifications

Vdss
200 V
Id
60 A
RDS(on)
40 mΩ
Max Temp
175 °C

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power SuppliesMotor Drives

Datasheet

IXTP60N20T-IXYS-datasheet-136324328.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXTP60N20T: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET from IXYS, designed for high-current, high-voltage applications like PDP drivers and power supplies.