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IXTQ200N10T AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IXTQ200N10T product

IXTQ200N10T

MOSFETs - Single

MOSFETN-Channel100VPower

The IXTQ200N10T is a high-power N-Channel TrenchMV MOSFET designed for automotive and industrial switching applications.

Best for

  • Automotive motor drives
  • High-current switching
  • DC/DC converters

Avoid if

  • Low-power or space-constrained applications where smaller packages are required.

Check before use

  • Thermal dissipation requirements and gate drive voltage levels.

Key specifications

Vdss
100 V
Id
200 A
Rds(on)
5.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

AutomotivePower

Datasheet

a4683818160b52a44a217bb4b4428554_littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_200n10t_datasheet.pdf.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IXTQ200N10T: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 100V, 200A N-Channel enhancement mode power MOSFET in a TO-3P package, featuring low on-resistance and high power density.