ProjectsPricingInsights

K4B2G1646F-BYMA AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

K4B2G1646F-BYMA product

K4B2G1646F-BYMA

Memory - DDR3 SDRAM

DDR3LSDRAMSamsungMemory

The K4B2G1646F-BYMA is a 2Gb DDR3L SDRAM from Samsung, organized as 128M x 16, designed for high-speed data transfer up to 1866Mbps.

Best for

  • Embedded systems
  • Networking equipment
  • Consumer electronics

Avoid if

  • Applications requiring non-volatile memory
  • Systems with strict power constraints below 1.28V

Check before use

  • Memory controller timing settings
  • Signal integrity for high-speed DDR3L interfaces

Key specifications

Memory Density
2Gb
Data Rate
1866Mbps
Voltage
1.35V / 1.5V
Package
96-FBGA

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

IndustrialConsumer

Datasheet

71a924b43c8d98cfad2fe3169d0552b9_2009081106_Samsung-K4B2G1646F-BYMA_C500274.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for K4B2G1646F-BYMA: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 2Gb DDR3L (Low Voltage) Synchronous DRAM, organized as 128M x 16, utilizing Samsung's F-die process.