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K4B4G1646E-BMMA AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

K4B4G1646E-BMMA product

K4B4G1646E-BMMA

Memory - DDR3 SDRAM

DDR3LMemoryIndustrial

The K4B4G1646E-BMMA is a 4Gb DDR3L SDRAM from Samsung, optimized for industrial applications with a 256Mx16 organization and 1.35V operation.

Best for

  • Industrial embedded systems
  • High-speed memory applications

Avoid if

  • Applications requiring standard 1.5V DDR3 without voltage regulation

Check before use

  • Signal integrity and timing parameters

Key specifications

Density
4Gb
Organization
256M x 16
Voltage
1.35V
Temp Range
-40°C to 95°C

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

IndustrialGeneral

Datasheet

a371af17e27459b890535d731128d46a_2204081830_Samsung-K4B4G1646E-BMMA_C2920165.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for K4B4G1646E-BMMA: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 4Gb DDR3L (Low Voltage) synchronous DRAM device organized as 256M x 16 bits, designed for high-speed data transfer.