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K4B4G1646E-BYMA AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

K4B4G1646E-BYMA product

K4B4G1646E-BYMA

Memory

DDR3LSDRAMMemorySamsung

The K4B4G1646E-BYMA is a 4Gb DDR3L SDRAM from Samsung, designed for high-speed memory applications requiring 1.35V operation.

Best for

  • High-performance computing
  • Embedded systems
  • Consumer electronics

Avoid if

  • Applications requiring standard 1.5V DDR3 only without 1.35V support

Check before use

  • Memory controller timing settings
  • Thermal dissipation requirements

Key specifications

Capacity
4Gb
Speed
1866Mbps
Voltage
1.35V
Package
96-FBGA

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

ComputingConsumer Electronics

Datasheet

b4b278ce5d26aaa2bd290676ea799f5c.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for K4B4G1646E-BYMA: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 4-gigabit (4Gb) DDR3L (Low Voltage) Synchronous DRAM (SDRAM) chip organized as 256M x 16 bits, manufactured by Samsung.