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KN3M65017D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

KN3M65017D product

KN3M65017D

UV

SiC MOSFET1700VPower Transistor

The KN3M65017D is a 1700V Silicon Carbide (SiC) Power MOSFET in a TO-247-3 package, optimized for high-voltage power conversion applications.

Best for

  • Auxiliary power supplies
  • Switch mode power supplies (SMPS)
  • High-voltage capacitive applications

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective.

Check before use

  • Gate drive voltage requirements (-5V/+20V recommended)
  • Thermal dissipation capacity (62W max)

Key specifications

Drain-Source Voltage
1700 V
Continuous Drain Current
7 A
On-Resistance
650 mΩ
Package
TO-247-3

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SupplyIndustrial

Datasheet

9f663fd3b1f5a09b206843d1d6421379_2308011458_KNSCHA-KN3M65017D_C7432998.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for KN3M65017D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage SiC Power MOSFET from KNSCHA, featuring a 1700V drain-source breakdown voltage and 650mΩ on-resistance.