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KNB2912A AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

KNB2912A product

KNB2912A

MOSFETs - Single

MOSFETN-Channel120V130A

The KNB2912A is a high-performance 120V, 130A N-Channel MOSFET utilizing advanced trench technology, designed for efficient power switching and high-frequency applications.

Best for

  • Power switching
  • UPS systems
  • High-frequency circuits

Avoid if

  • Applications requiring extremely low gate charge
  • Space-constrained designs where TO-263 is too large

Check before use

  • Thermal dissipation requirements
  • Gate drive circuit compatibility

Key specifications

VDS
120V
ID
130A
RDS(on)
6.0mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SwitchingUPS

Datasheet

a37c3750dd18a0f6e87c8fb801f0ede9_2109132030_KIA-Semicon-Tech-KNB2912A_C2896656.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for KNB2912A: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The KNB2912A is an N-Channel MOSFET from KIA Semiconductor, featuring a 120V drain-source voltage and 130A continuous drain current capability.