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KSE350G-JSM AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

KSE350G-JSM product

KSE350G-JSM

Transistors - Bipolar (BJT) - Single

NPNPower Transistor300V

The KSE350G-JSM is a 300V NPN power transistor housed in a TO-126F package, suitable for high-voltage switching and general-purpose amplification.

Best for

  • High voltage switching
  • General purpose power amplification

Avoid if

  • Applications requiring high current (>0.5A)

Check before use

  • Thermal dissipation requirements

Key specifications

VCEO
300 V
IC
0.5 A
hFE
30 - 240

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

9753b08cb9f4101449349159b9f7e7fa_2404101034_JSMSEMI-KSE350G-JSM_C18188743.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for KSE350G-JSM: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN power transistor designed for high-voltage applications with a collector-emitter sustaining voltage of 300V.