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KSI2301CDS-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

KSI2301CDS-T1-GE3 product

KSI2301CDS-T1-GE3

MOSFETs - Single

P-ChannelMOSFETSOT-23

The KSI2301CDS-T1-GE3 is a P-channel TrenchFET MOSFET designed for power switching applications in a compact SOT-23 package.

Best for

  • Low-voltage power switching
  • Load switching

Avoid if

  • High-voltage applications exceeding -20V

Check before use

  • Gate threshold voltage compatibility

Key specifications

Vds
-20 V
Id
-3 A
Rds(on)
110 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

c9abde67ecad0874bc50da3f772b2ab0_2109011630_KUU-KSI2301CDS-T1-GE3_C2891843.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for KSI2301CDS-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel power MOSFET manufactured by KUU, optimized for low-voltage switching applications.