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L2SC3356LT1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

L2SC3356LT1G product

L2SC3356LT1G

Transistors - Bipolar (BJT) - RF

RF TransistorNPNLow Noise

The L2SC3356LT1G is an NPN silicon epitaxial transistor optimized for low-noise RF amplification in VHF, UHF, and CATV frequency bands.

Best for

  • RF low-noise amplifiers
  • VHF/UHF signal processing

Avoid if

  • High-power switching applications

Check before use

  • Thermal dissipation limits in high-ambient temperature environments

Key specifications

Gain Bandwidth Product
7 GHz
Noise Figure
1.1 dB
Collector Current
100 mA

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

RF Amplification

Datasheet

5cff32ae64c8286791ccd8829141d97a.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for L2SC3356LT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-frequency NPN transistor designed for low-noise amplification in VHF, UHF, and CATV applications.