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L2SC3356WT1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

L2SC3356WT1G product

L2SC3356WT1G

Transistors - Bipolar (BJT) - RF

NPNRF TransistorLow Noise

The L2SC3356WT1G is a high-performance NPN RF transistor optimized for low-noise amplification in VHF, UHF, and CATV bands.

Best for

  • RF low-noise amplifiers
  • VHF/UHF signal processing
  • CATV infrastructure

Avoid if

  • High-power switching applications
  • Low-frequency audio amplification

Check before use

  • PCB layout parasitics
  • Thermal dissipation in high-ambient environments

Key specifications

Noise Figure
1.1 dB
Gain
11 dB
fT
7 GHz

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

RF Communications

Datasheet

781c7e4539301056e791fcd6bc4db8da.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for L2SC3356WT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN silicon epitaxial transistor designed for low-noise RF amplification in VHF, UHF, and CATV frequency bands.