LH8050QLT1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

LH8050QLT1G product

LH8050QLT1G

Transistors - Bipolar (BJT) - Single

NPNTransistorSOT-23General Purpose

The LH8050QLT1G is a high-current NPN transistor in a SOT-23 package, ideal for general-purpose switching and amplification.

Best for

  • General purpose switching
  • Signal amplification
  • Compact high-current circuits

Avoid if

  • Applications requiring >225mW power dissipation
  • High-frequency RF applications

Check before use

  • Thermal design
  • Gain binning (hFE)

Key specifications

VCEO
50 V
IC
1.5 A
hFE (Q-bin)
160-320

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General PurposeConsumer Electronics

CAD Models

Download ECAD models for LH8050QLT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN silicon epitaxial planar transistor designed for general-purpose applications requiring high current capacity up to 1.5A.