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LM2101DR AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

LM2101DR product

LM2101DR

Voltage Regulators - DC DC Switching Regulators

half-bridge driverhigh-side gate driverlow-side gate driverMOSFET driverSOIC-8bootstrap

LM2101DR is an 8-pin SOIC half-bridge gate driver for high- and low-side N-channel MOSFETs, supporting up to 107 V on BST.

Best for

  • Half-bridge power stages
  • Synchronous buck converters
  • Motor and general MOSFET gate-drive circuits

Avoid if

  • Independent galvanic isolation is required
  • Built-in dead-time generation is required

Check before use

  • MOSFET gate charge and switching frequency
  • Bootstrap capacitor recharge conditions
  • High-side duty cycle and minimum low-side on-time
  • PCB layout and SH negative transients

Key specifications

Package
SOIC (D), 8 pins
GVDD supply
9 V to 18 V
Maximum BST voltage
107 V
Peak source/sink current
0.5 A / 0.8 A
Propagation delay
115 ns typical

Compliance & Environment

RoHS
Yes
REACH
-
MSL
Level-1-260C-UNLIM
ECCN
-
HTSUS
-

Application

Half-bridge MOSFET stagesBLDC and PMSM motor drivesSynchronous buck converters

Datasheet

sluaap4

800 KB

Datasheet AI

CAD Models

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PCB Footprint
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

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Design and risk insights

Questions & answers

LM2101DR is a Texas Instruments high-voltage half-bridge gate driver with independently controlled high-side and low-side outputs for N-channel MOSFETs.