LMBT5551LT1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

LMBT5551LT1G product

LMBT5551LT1G

Transistors - Bipolar (BJT) - Single

NPNHigh VoltageSOT-23AEC-Q101

The LMBT5551LT1G is a high-voltage NPN transistor in a SOT-23 package, capable of handling 160V VCEO and 600mA collector current.

Best for

  • High-voltage switching
  • Signal amplification
  • Automotive electronics

Avoid if

  • Applications requiring currents significantly above 600mA
  • Extremely high-power dissipation without adequate cooling

Check before use

  • Thermal derating requirements
  • PCB footprint compatibility

Key specifications

VCEO
160 V
IC
600 mA
hFE
80 - 250
Package
SOT-23

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementAutomotiveGeneral Switching

CAD Models

Download ECAD models for LMBT5551LT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification.