LMBT6427LT1G Datasheet, Specs, Alternatives & ECAD | LRC | PartGenie

AI summary

LMBT6427LT1G product

The LMBT6427LT1G is a high-gain NPN Darlington transistor in a SOT-23 package, suitable for low-power amplification tasks.

Best for

Signal amplification
Low-power switching

Avoid if

High-frequency switching applications

Check before use

Thermal dissipation requirements

Key specifications

VCEO: 40 V
IC: 500 mA
hFE: 10k - 200k

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

General Purpose

Datasheet

f22e945b2cc5b5d4527d8b3105cc9958.pdf

800 KB

CAD Models

Download ECAD models for LMBT6427LT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN silicon Darlington transistor designed for high-gain amplification in surface-mount applications.