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LMG2100R026VBNR AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

LMG2100R026VBNR product

LMG2100R026VBNR

Power Management (PMIC)

GaN half bridge100 V pulsed53 Aintegrated gate driverVQFN5 V bias

LMG2100R026VBNR is an integrated 93 V continuous GaN half-bridge power stage for compact, fast-switching power converters.

Best for

  • High-frequency synchronous buck stages
  • Compact 48 V-class power conversion
  • Half-bridge converter designs requiring integrated GaN drivers

Avoid if

  • The controller cannot guarantee non-overlapping HI and LI signals
  • The bus voltage can exceed the 93 V continuous rating
  • A low-inductance multilayer PCB layout is not feasible

Check before use

  • Dead-time margin and propagation-delay matching
  • Thermal design at switching frequency and load current
  • Bootstrap capacitor placement and high-side refresh requirements

Key specifications

Bus voltage rating
93 V continuous, 100 V pulsed
Current rating
53 A
GaN FET on-resistance
2.6 mΩ to 3.5 mΩ maximum
Supply voltage
4.75 V to 5.25 V
Package
18-pin VQFN, 7.00 mm × 4.50 mm × 0.89 mm

Compliance & Environment

RoHS
Yes
REACH
-
MSL
Level-2-260C-1 YEAR
ECCN
-
HTSUS
-

Application

DC/DC power conversionIndustrial power suppliesMotor drives

Datasheet

snvu915

800 KB

Datasheet AI

CAD Models

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EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Texas Instruments 18-pin GaN half-bridge power stage combining two enhancement-mode GaN FETs with high-side and low-side gate drivers. The power stage is rated for 93 V continuous and 100 V pulsed bus voltage.