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LMG3410R150RWHR AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

LMG3410R150RWHR product

LMG3410R150RWHR

Power Distribution Switches

600 V GaNIntegrated driverLatched OCP150 mΩVQFN-32

LMG3410R150RWHR is a 600 V smart GaN power stage with integrated direct drive and latched overcurrent protection for fast high-voltage switching.

Best for

  • High-voltage GaN half bridges
  • Hard-switched PFC stages
  • Resonant DC-DC power stages

Avoid if

  • A two-layer PCB is required
  • Significant off-state third-quadrant conduction is unavoidable
  • A non-latching overcurrent response is required

Check before use

  • Drain transient remains below 600 V
  • Thermal path from source-connected pad is adequate
  • High-side supply startup is controlled
  • FAULT output is monitored

Key specifications

Drain-source voltage
600 V
On-state resistance
150 mΩ typical at 25 °C
DC current
6 A at TJ = 125 °C
Protection
Latched OCP, OTP and UVLO
Package
32-pin 8 mm × 8 mm VQFN

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
MSL 3, 260 °C, 168 hours
ECCN
-
HTSUS
-

Application

Power factor correctionIndustrial power conversionResonant DC-DC convertersMotor drives

Datasheet

spry340

800 KB

Datasheet AI

CAD Models

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3D Model
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Where to Buy

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Alternative components

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Questions & answers

LMG3410R150RWHR is a Texas Instruments 600 V GaN transistor power stage with an integrated gate driver, negative gate-bias buck-boost converter, LDO, UVLO, OTP and latched overcurrent protection. It is supplied in a 32-pin RWH VQFN package.