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LMUN2216LT1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

LMUN2216LT1G product

LMUN2216LT1G

Transistors - Bipolar (BJT) - Single

NPNPre-BiasedSOT-23

The LMUN2216LT1G is a pre-biased NPN transistor in a SOT-23 package, featuring a 4.7kΩ base resistor and no internal emitter-base resistor.

Best for

  • Digital switching
  • Interface circuits
  • Low-power signal driving

Avoid if

  • High-power applications exceeding 100mA or 246mW dissipation

Check before use

  • Ensure the 4.7kΩ base resistor matches the drive signal capability.

Key specifications

R1
4.7 kΩ
VCEO
50 V
IC
100 mA
hFE
160

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General SwitchingInterface

Datasheet

dd1052c7a30e491f8d69650b497d47f4.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for LMUN2216LT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN digital transistor with an integrated 4.7kΩ base resistor, designed to simplify circuit design by eliminating external bias components.