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LMUN5214DW1T1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

LMUN5214DW1T1G product

LMUN5214DW1T1G

Transistors - Bipolar (BJT) - Pre-Biased

Dual NPNBias Resistor TransistorSOT-363

The LMUN5214DW1T1G is a dual NPN bias resistor transistor (BRT) in a SOT-363 package, featuring integrated 10k/47k resistors for simplified circuit design.

Best for

  • Space-constrained digital switching
  • Low-power interface circuits

Avoid if

  • High-current applications exceeding 100mA

Check before use

  • Thermal dissipation limits when both junctions are heated

Key specifications

R1
10 kOhm
R2
47 kOhm
VCEO
50 V
IC
100 mA

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General SwitchingConsumer Electronics

Datasheet

279495d349d314933de0da3b1e096c97.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for LMUN5214DW1T1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual NPN transistor with an integrated monolithic bias resistor network, designed to replace discrete components in space-constrained surface mount applications.