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LMUN5215DW1T1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

LMUN5215DW1T1G product

LMUN5215DW1T1G

Transistors - BJT - Arrays

Dual NPNBRTSOT-363

The LMUN5215DW1T1G is a dual NPN bias resistor transistor (BRT) in an SOT-363 package, designed to integrate bias networks and save PCB space.

Best for

  • Space-constrained designs
  • Automotive electronics
  • General switching

Avoid if

  • High-power applications exceeding 100mA

Check before use

  • Resistor values (R1=10k, R2=∞)

Key specifications

VCEO
50 V
IC
100 mA
R1
10 kΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

AutomotiveGeneral Switching

Datasheet

89201b94a0bf12425f1e56727fdb5a4f_2212131909_LRC-LMUN5215DW1T1G_C5273162.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for LMUN5215DW1T1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual NPN transistor with an integrated monolithic bias resistor network, housed in a compact SOT-363 surface-mount package.