LMUN5314DW1T1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

LMUN5314DW1T1G product

LMUN5314DW1T1G

Transistors - Bipolar (BJT) - Pre-Biased

Dual TransistorPre-biasedSOT-363

The LMUN5314DW1T1G is a dual NPN/PNP pre-biased transistor in a SOT-363 package, designed to replace discrete components with an integrated resistor network.

Best for

  • Space-constrained switching applications
  • Signal conditioning

Avoid if

  • High-power applications exceeding 100mA

Check before use

  • Thermal dissipation limits when both junctions are active

Key specifications

VCEO
50 V
IC
100 mA
R1/R2
10k/47k

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General SwitchingIndustrial Control

CAD Models

Download ECAD models for LMUN5314DW1T1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual-transistor device (one NPN, one PNP) featuring integrated bias resistors, housed in a compact SOT-363 surface-mount package.