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LMUN5335DW1T1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

LMUN5335DW1T1G product

LMUN5335DW1T1G

Transistors - BJT - Arrays

Dual BRTNPN/PNPSOT-363

The LMUN5335DW1T1G is a dual NPN/PNP bias resistor transistor (BRT) in a SOT-363 package, designed to replace discrete transistors and external bias networks.

Best for

  • Space-constrained digital switching
  • Interface circuits

Avoid if

  • High-power applications exceeding 250mW dissipation

Check before use

  • Base drive current requirements
  • Thermal dissipation limits

Key specifications

R1
2.2 kΩ
R2
47 kΩ
VCEO
50 V

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General

Datasheet

b0250cab65cfa786163ea5a23f680d95.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for LMUN5335DW1T1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a monolithic dual-transistor device (one NPN, one PNP) that includes internal bias resistors (R1=2.2kΩ, R2=47kΩ) to simplify digital switching circuits.