LMV324IDR-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

LMV324IDR-HXY product

The LMV324IDR-HXY is a quad CMOS operational amplifier designed for low-voltage, low-power applications requiring rail-to-rail input and output capabilities.

Best for

Battery-powered systems
Low-voltage signal conditioning

Avoid if

High-speed applications requiring >1.2MHz bandwidth

Check before use

Capacitive load stability

Key specifications

Channels: 4
GBW: 1.2 MHz
Supply Voltage: 2.1V - 6.0V
Offset Voltage: 3.0 mV

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Sensor InterfacesBattery Control

Datasheet

97272877da8b48ac0ded265b736a6cb7_2404041920_HXY-MOSFET-LMV324IDR-HXY_C19626963.pdf

800 KB

CAD Models

Download ECAD models for LMV324IDR-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a quad-channel, general-purpose CMOS operational amplifier featuring a 1.2MHz gain-bandwidth product and rail-to-rail input/output swing.