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LN7910DT1WG AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

LN7910DT1WG product

LN7910DT1WG

MOSFETs - Single

MOSFETN-Channel150VPower Trench

The LN7910DT1WG is a 150V N-Channel Power Trench MOSFET in a DFN5060-8B package, optimized for high-efficiency DC-DC conversion.

Best for

  • DC-DC power supplies
  • Power management circuits

Avoid if

  • Applications requiring extremely low gate drive voltages below 2V

Check before use

  • Thermal dissipation requirements
  • Gate drive circuit capability

Key specifications

VDS
150 V
ID
12.4 A
RDS(on)
9.5 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

DC-DC Conversion

Datasheet

e40a9904ddcc8c035a6a4a91280e1a1f_2201121800_LRC-LN7910DT1WG_C2936692.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for LN7910DT1WG: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Power Trench MOSFET featuring low RDS(on) and high efficiency, suitable for DC-DC power conversion.