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LND150K1-G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

LND150K1-G product

LND150K1-G

MOSFETs - Single

Depletion-ModeHigh-VoltageDMOS

The LND150K1-G is a 500V N-channel depletion-mode DMOS FET in a SOT-23 package, designed for high-voltage, normally-on applications.

Best for

  • High-voltage switching
  • Constant current sources

Avoid if

  • Low-voltage logic switching where enhancement-mode FETs are standard

Check before use

  • Gate-to-source voltage limits
  • Thermal dissipation in SOT-23 package

Key specifications

VDS
500 V
ID(min)
1.0 mA
RDS(on)
1.0 kΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial Controls

Datasheet

Microchip-company-71.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for LND150K1-G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage, N-channel depletion-mode (normally-on) transistor that conducts current when the gate-to-source voltage is zero.