LP3218DT1G Datasheet, Specs, Alternatives & ECAD | LRC | PartGenie

AI summary

LP3218DT1G product

The LP3218DT1G is a 12V P-Channel enhancement-mode MOSFET designed for space-constrained applications requiring low on-resistance and high current handling.

Best for

Battery-powered devices
Load switching

Avoid if

Applications requiring VGS > 8V
High-voltage systems exceeding 12V

Check before use

Thermal design
Gate drive compatibility

Key specifications

VDSS: 12 V
ID: 8.2 A
RDS(on): 18 mΩ

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power Management

Datasheet

4cb96c41626a606f194ef593f267a579.pdf

800 KB

CAD Models

Download ECAD models for LP3218DT1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement MOSFET featuring an ESD-protected gate, housed in a compact 2.0x2.0x0.62 mm DFN package.