LSIC1MO170E0750 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

LSIC1MO170E0750 product

LSIC1MO170E0750

MOSFETs - Single

SiC MOSFET1700VHigh VoltagePower Transistor

The LSIC1MO170E0750 is a high-voltage 1700V SiC MOSFET designed for high-efficiency power conversion.

Best for

  • High-voltage power conversion
  • High-frequency switching

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
1700 V
RDS(on)
750 mOhm
ID
6.2 A

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

CAD Models

Download ECAD models for LSIC1MO170E0750: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Where to Buy

Real-time and catalog pricing from verified distributors

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1700V, 750mOhm N-Channel Silicon Carbide (SiC) MOSFET in a TO-247-3L package.