What should engineers review before using MBT3904DW1T1G-CN?

Review the 40 V collector-emitter limit, 200 mA continuous collector-current rating, gain variation versus current, saturation-voltage limits, package pinout, and PCB thermal conditions. Compliance and lifecycle data were not provided in the supplied sources.

What is the pinout of MBT3904DW1T1G-CN?

Use the MBT3904DW1T1G-CN datasheet for the official pinout diagram and pin names. In PartGenie, ask Datasheet AI about MBT3904DW1T1G-CN pinout to locate pins, power rails, and interface signals before layout.

MBT3904DW1T1G-CN Datasheet, Specs, Alternatives & ECAD | ChipNobo

AI summary

MBT3904DW1T1G-CN is a dual NPN transistor array in SOT-363 for compact low-power switching and amplification. The datasheet specifies 40 V VCEO, 200 mA continuous collector current, and 300 MHz minimum transition frequency.

Best for

Compact low-power NPN switching stages
Low-power signal amplification
Two-transistor circuits requiring a small SOT-363 footprint

Avoid if

Applications requiring compliance or qualification evidence not supplied by the datasheet
High-power circuits with limited PCB thermal area
Circuits exceeding 40 V collector-emitter voltage