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MBT3906DW1T1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MBT3906DW1T1G product

MBT3906DW1T1G

Transistors - Bipolar (BJT) - Arrays

Dual BJTPNPSOT-363

The MBT3906DW1T1G is a dual PNP general-purpose transistor in a compact SOT-363 package, suitable for space-constrained amplifier circuits.

Best for

  • General purpose amplification
  • Low-power switching
  • Space-constrained designs

Avoid if

  • High-power applications exceeding 150mW dissipation

Check before use

  • Thermal dissipation requirements

Key specifications

Configuration
Dual PNP
VCEO
-40 V
IC
-200 mA

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

General Purpose

Datasheet

ON-Semiconductor-company-79.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MBT3906DW1T1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual PNP bipolar junction transistor (BJT) array housed in a single 6-pin SOT-363 surface-mount package.