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MBT6429DW1T1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MBT6429DW1T1G product

MBT6429DW1T1G

Transistors - Bipolar (BJT) - Arrays

Dual NPNTransistor ArrayAmplifier

The MBT6429DW1T1G is a dual NPN silicon transistor array in a compact SC-88 package, suitable for general-purpose amplifier applications.

Best for

  • General-purpose signal amplification
  • Space-constrained PCB designs

Avoid if

  • High-power switching applications exceeding 150mW dissipation

Check before use

  • Thermal management in high-density layouts

Key specifications

VCEO
45 V
IC
200 mA
hFE
500 - 1250
Package
SC-88

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

General Signal Amplification

Datasheet

MBT6429DW1T1-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for MBT6429DW1T1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual NPN silicon amplifier transistor array packaged in a surface-mount SC-88 (SOT-363) housing.