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MCAC38N10YHE3-TP AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MCAC38N10YHE3-TP product

MCAC38N10YHE3-TP

MOSFETs - Single

N-ChannelMOSFETAEC-Q101DFN5060

The MCAC38N10YHE3-TP is an AEC-Q101 qualified N-Channel MOSFET in a DFN5060 package, designed for high-efficiency power switching applications.

Best for

  • Automotive power management
  • DC-DC converters
  • Motor control

Avoid if

  • Applications requiring extremely low gate threshold voltages below 1V

Check before use

  • Thermal dissipation requirements for steady-state operation

Key specifications

VDS
100 V
ID
38 A
RDS(on)
15 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Application

AutomotivePower Management

Datasheet

a105ddfdc3776ae57290d5c747c02a59_2312271341_MCC-Micro-Commercial-Components-MCAC38N10YHE3-TP_C6989639.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MCAC38N10YHE3-TP: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel MOSFET utilizing Split Gate Trench technology, optimized for low RDS(ON) and high thermal dissipation.