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MDV3605URH-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MDV3605URH-HXY product

MDV3605URH-HXY

MOSFETs - Single

P-ChannelMOSFET30VDFN3X3-8L

The MDV3605URH is a -30V P-Channel MOSFET in a DFN3X3-8L package, optimized for high-current switching applications.

Best for

  • High side switches
  • Full bridge converters
  • DC/DC converters

Avoid if

  • Applications requiring N-Channel polarity
  • Extreme high-temperature environments exceeding 150°C

Check before use

  • Thermal design
  • Gate drive voltage compatibility

Key specifications

VDS
-30 V
ID
-35 A
RDS(ON)
<15 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

baa98ded02426227f3fedba5da23fbfb_2403261740_HXY-MOSFET-MDV3605URH-HXY_C22367084.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MDV3605URH-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET utilizing advanced trench technology, designed for high-current load applications.