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ME08N20-G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ME08N20-G product

ME08N20-G

MOSFETs - Single

N-ChannelMOSFET200VTO-252

The ME08N20-G is a 200V N-Channel MOSFET in a TO-252-3L package, optimized for low-loss power management and DC/DC conversion.

Best for

  • DC/DC converters
  • LCD inverters
  • Power management circuits

Avoid if

  • Applications requiring extremely low gate drive voltages below 2V.
  • Space-constrained designs where TO-252-3L is too large.

Check before use

  • Thermal dissipation requirements
  • Gate drive capability

Key specifications

VDS
200 V
ID
9 A
RDS(ON)
0.4 Ω

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementDC/DC Converter

Datasheet

cbe3e76edb990a2e572fef4839d00656_2304140030_MATSUKI-ME08N20-G_C709728.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ME08N20-G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The ME08N20-G is an N-Channel logic enhancement mode power MOSFET manufactured by Matsuki Electric, utilizing high cell density DMOS trench technology.