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ME15N25-G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ME15N25-G product

ME15N25-G

MOSFETs - Single

MOSFETN-Channel250VPower

The ME15N25-G is a 250V N-Channel power MOSFET in a TO-252-3L package, optimized for low on-resistance using trench technology.

Best for

  • DC/DC converters
  • Load switching applications
  • Display inverter circuits

Avoid if

  • Applications requiring extremely low gate drive voltages below 2V.

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
250 V
ID
17.1 A
RDS(ON)
265 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

b2e1f3f2e67fd7dbcbac255610bbfe1c_2207080130_MATSUKI-ME15N25-G_C3647146.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ME15N25-G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel logic enhancement mode power MOSFET manufactured by Matsuki, utilizing DMOS trench technology for high cell density and low on-resistance.