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ME2306A-G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ME2306A-G product

ME2306A-G

MOSFETs - Single

N-ChannelMOSFET30VSOT-23

The ME2306A-G is a 30V N-Channel MOSFET in a SOT-23 package, optimized for low-voltage power management and battery-powered applications.

Best for

  • Portable electronics
  • Battery-powered systems
  • Load switching

Avoid if

  • High-voltage applications exceeding 30V
  • High-power designs requiring significant heat dissipation beyond SOT-23 capabilities

Check before use

  • Thermal design on the PCB
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
5.38 A
RDS(on)
34.5 mΩ

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementPortable Equipment

Datasheet

de573902a66b8213e2477ef1f1560be1_2207061845_MATSUKI-ME2306A-G_C3647148.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ME2306A-G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel logic-level MOSFET designed for high-density power management in small surface-mount applications.