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ME2308S-G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ME2308S-G product

ME2308S-G

MOSFETs

N-ChannelMOSFET60VSOT-23

The ME2308S-G is a 60V N-Channel MOSFET in a SOT-23 package, optimized for low-voltage power management and switching applications.

Best for

  • Portable battery-powered devices
  • Low-voltage DC/DC conversion

Avoid if

  • High-power applications exceeding 1W dissipation

Check before use

  • Thermal design on the PCB

Key specifications

VDS
60 V
ID
2.6 A
RDS(ON)
100 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementPortable Equipment

Datasheet

52712b729ca1c820e853317b807c94bf_2007241236_MATSUKI-ME2308S-G_C709744.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ME2308S-G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET designed for high-density, low-voltage power management applications.