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ME2309-G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ME2309-G product

ME2309-G

MOSFETs - Single

P-ChannelMOSFETSOT-2360V

The ME2309-G is a 60V P-Channel MOSFET in an SOT-23 package, ideal for high-side switching and power management in portable devices.

Best for

  • Notebook power management
  • Portable electronics
  • Load switching

Avoid if

  • Applications requiring high current beyond -1.9A
  • High-temperature environments exceeding 150°C

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
-60 V
ID
-1.9 A
RDS(ON)
215 mΩ

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementPortable Equipment

Datasheet

7c8b09451c5bddae30e4228fc38b5583_2007241236_MATSUKI-ME2309-G_C709748.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ME2309-G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The ME2309-G is a P-Channel logic enhancement mode power MOSFET manufactured by Matsuki, designed for low-voltage power management applications.