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ME50N06A-G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ME50N06A-G product

ME50N06A-G

MOSFETs - Single

N-ChannelMOSFET60VPower Management

The ME50N06A-G is a 60V N-Channel MOSFET in a TO-252-3L package, designed for efficient power management and DC/DC conversion.

Best for

  • DC/DC converters
  • Power management circuits
  • LCD TV inverters

Avoid if

  • Applications requiring extremely low gate charge
  • High-frequency switching beyond typical MOSFET capabilities

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDSS
60 V
ID
35.1 A
RDS(on)
22 mΩ

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementDC/DC Converters

Datasheet

4f9f3246254db293db67d8043a2f57c8_2103051837_MATSUKI-ME50N06A-G_C2693566.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ME50N06A-G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel logic enhancement mode power MOSFET using high cell density DMOS trench technology, optimized for low on-state resistance.