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ME50P06-G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

ME50P06-G product

ME50P06-G

MOSFETs - Single

P-ChannelMOSFET60VPower Management

The ME50P06-G is a high-performance P-Channel 60V MOSFET designed for efficient power management in portable electronics and DC/DC conversion.

Best for

  • Notebook power management
  • DC/DC converters
  • Load switches

Avoid if

  • Applications requiring N-Channel logic
  • Extremely space-constrained designs where TO-252 is too large

Check before use

  • Gate drive voltage compatibility
  • Thermal dissipation requirements

Key specifications

VDS
-60 V
ID
-61 A
RDS(ON)
17 mΩ

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementDC/DC Converter

Datasheet

283c7ec15c06de65a16c9a9fbbb4160c_1809192141_MATSUKI-ME50P06-G_C165230.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for ME50P06-G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel logic enhancement mode power MOSFET utilizing DMOS trench technology, optimized for low on-state resistance.