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MEE7816S-G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MEE7816S-G product

MEE7816S-G

MOSFETs - Single

N-Channel100VMOSFETDFN3x3

The MEE7816S-G is a 100V N-Channel MOSFET in a compact DFN(S) 3x3 package, optimized for medium-voltage power management and switching applications.

Best for

  • Power management
  • Synchronous rectification
  • Load switching

Avoid if

  • Applications requiring higher than 100V or significantly higher current handling.

Check before use

  • Thermal design and PCB copper area for heat dissipation.

Key specifications

VDS
100 V
ID
10.2 A
RDS(ON)
100 mΩ

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementLoad Switch

Datasheet

09bd674d0d943d7aa73fa233a6a40f75_2207061845_MATSUKI-MEE7816S-G_C3647158.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MEE7816S-G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET from Matsuki, utilizing Extended Trench Gate (ETG) technology for high efficiency in medium-voltage circuits.