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MEM2310M3G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MEM2310M3G product

MEM2310M3G

Discrete Semiconductor Products

N-ChannelMOSFET30VSOT23-3L

The MEM2310M3G is a 30V N-Channel MOSFET designed for low-voltage, high-efficiency switching applications in a compact SOT23-3L package.

Best for

  • Battery management
  • DC-DC conversion

Avoid if

  • High-voltage applications exceeding 30V

Check before use

  • Gate drive voltage levels

Key specifications

VDSS
30 V
ID
5.8 A
RDS(ON)
25 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

16c294a4a707d6f281205e505a8bd317.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MEM2310M3G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode MOSFET utilizing high-density DMOS trench technology to achieve low on-state resistance.