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MJB45H11T4G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MJB45H11T4G product

MJB45H11T4G

Transistors - Bipolar (BJT) - Single

PNPPower TransistorD2PAKAEC-Q101

The MJB45H11T4G is a high-performance PNP power transistor suitable for demanding switching and amplification tasks in automotive and industrial power systems.

Best for

  • Switching regulators
  • Power amplifiers
  • Automotive driver stages

Avoid if

  • Applications requiring extremely low power dissipation or very small form factors.

Check before use

  • Thermal dissipation requirements and SOA limits.

Key specifications

Polarity
PNP
VCEO
80 V
IC
10 A

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075

Application

Power ManagementAutomotive

Datasheet

MJB44H11-D.PDF

800 KB

Datasheet AI

CAD Models

Download ECAD models for MJB45H11T4G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP complementary power transistor designed for general-purpose power amplification and switching, featuring a 10A current rating and 80V breakdown voltage.