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MJD112T4G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MJD112T4G product

MJD112T4G

Transistors - Bipolar (BJT) - Single

NPNDarlingtonPower Transistor

The MJD112T4G is a 100V, 2A NPN Darlington power transistor in a DPAK package, suitable for general-purpose switching and amplification.

Best for

  • Switching regulators
  • Converters
  • Power amplifiers

Avoid if

  • High-frequency applications requiring low capacitance

Check before use

  • Thermal dissipation requirements

Key specifications

VCEO
100 V
IC
2 A
PD
20 W

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Application

PowerIndustrial

Datasheet

ON-Semiconductor-company-79.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MJD112T4G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN Darlington power transistor designed for general-purpose power and switching applications.