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MJD122-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MJD122-HXY product

MJD122-HXY

Transistors - Bipolar (BJT) - Single

NPNDarlingtonDPAK100V

The MJD122-HXY is a high-gain NPN Darlington transistor in a DPAK package, suitable for power switching and amplification.

Best for

  • Power switching
  • General amplification

Avoid if

  • Applications requiring extremely low saturation voltage (Darlington transistors have higher VCE(sat) than standard BJTs)

Check before use

  • Thermal dissipation requirements

Key specifications

VCEO
100 V
IC
8 A
hFE
1000 - 12000

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SwitchingAmplification

Datasheet

30b27e4675af237002580cc5b9310819_2401261512_HXY-MOSFET-MJD122-HXY_C20611969.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MJD122-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN Darlington transistor designed for high-gain applications, electrically similar to the industry-standard TIP122.