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MJD122D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MJD122D product

MJD122D

Transistors - Bipolar (BJT) - Single

NPNDarlingtonPower TransistorTO-252

The MJD122D is a silicon NPN Darlington power transistor housed in a TO-252 (DPAK) surface-mount package, suitable for general-purpose amplification and low-speed switching.

Best for

  • General purpose amplification
  • Low-speed switching circuits

Avoid if

  • High-frequency switching applications

Check before use

  • Thermal resistance and heat dissipation requirements

Key specifications

VCEO
100 V
IC (Continuous)
8 A
hFE
1000 - 12000
Package
TO-252

Compliance & Environment

RoHS
RoHS
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Industrial

Datasheet

5e65bbf6d49c5cf0071671bbc3e2cbb8_2209051730_Slkor-SLKORMICRO-Elec--MJD122D_C5155434.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MJD122D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The MJD122D is an NPN Darlington power transistor designed for high-gain applications, featuring a 100V collector-emitter breakdown voltage and an 8A continuous collector current capability.