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MJD122T4G(MS) AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MJD122T4G(MS) product

MJD122T4G(MS)

Transistors - Bipolar (BJT) - Single

NPNDarlingtonTO-252

The MJD122T4G(MS) is an NPN Darlington transistor designed for high-gain switching applications, featuring an integrated damper diode.

Best for

  • General purpose switching
  • Power amplification

Avoid if

  • High-frequency applications requiring fast switching speeds

Check before use

  • Thermal dissipation requirements

Key specifications

VCEO
-100 V
IC
-6 A
hFE
1000-12000

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Switching

Datasheet

51d43d2972e6e3f7fc0cc2c63360830e_2404151058_MSKSEMI-MJD122T4G-MS_C22365380.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MJD122T4G(MS): KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN Darlington transistor with high DC current gain, electrically similar to the industry-standard TIP122.