ProjectsPricingInsights

MJD127T4G-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

MJD127T4G-HXY product

MJD127T4G-HXY

Transistors - Bipolar (BJT) - Single Pre-Biased

PNPDarlingtonDPAK100V

The MJD127T4G is a PNP Darlington transistor suitable for high-gain power switching and amplification, featuring a -100V rating and -8A current capacity in a DPAK package.

Best for

  • Power switching
  • General amplification

Avoid if

  • Applications requiring extremely low saturation voltage

Check before use

  • Thermal dissipation requirements

Key specifications

VCEO
-100 V
IC
-8 A
hFE
1000 - 12000

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerGeneral

Datasheet

4a504cc780621c9fcd28d35d138ab31a_2401261512_HXY-MOSFET-MJD127T4G-HXY_C20611968.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for MJD127T4G-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP Darlington transistor with an integrated damper diode, electrically similar to the TIP127, designed for high-gain applications.